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| oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Applications Lead free versions available RoHS compliant (lead free version)* Low profile Surface mount Very low forward voltage drop Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players *R CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 40 V. Bourns(R) Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 C Unless Otherwise Noted) Parameter Symbol B120L B120R CD216B130L B140 Unit Forward Voltage (Max.) (If = 1 A) Typical Junction Capacitance* Reverse Current (Max.) (at Rated VR) VF CT IR 0.45 90 400 0.53 75 10 0.38 70 410 0.55 60 500 V pF A * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 C Unless Otherwise Noted) Parameter Symbol B120L B120R CD216B130L B140 Unit Repetitive Peak Reverse Voltage DC Blocking Voltage RMS Voltage Average Forward Current @ TL = 130 C Peak Forward Surge Current** Max. Instantaneous Forward Voltage*** @ IF = 0.1 A @ IF = 1.0 A @ IF = 2.0 A @ IF = 3.0 A Max. Instantaneous Reverse Current @ VR = 40 V @ VR = 30 V @ VR = 20 V @ VR = 10 V @ VR = 5 V Thermal Resistance Junction to Lead (Anode) Junction to Tab (Cathode) Junction to Ambient Storage Temperature Junction Temperature VRRM VDC VRMS IO IFSM VF 20 20 14 20 20 14 1 30 30 21 40 40 28 V V V A 50 0.34 0.45 0.65 50 0.455 0.53 0.595 50 0.30 0.38 0.52 40 0.36 0.55 0.85 0.50 A V IR 0.4 0.1 0.0100 0.0010 0.0005 35 20 250 -55 to +125 -55 to +150 0.41 0.13 0.05 0.15 mA RJL RJTAB RJA TSTG TJ C/W C/W C/W C C ** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method). *** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Product Dimensions H Recommended Pad Layout A A B C K B J D E Dimension C A (Max.) B (Min.) G I G F C (Min.) D (Max.) E D E (Min.) Physical Specifications DO-216AA 2.67 (0.105) 2.54 (0.100) 1.27 (0.050) 0.635 (0.025) 0.762 (0.030) Dimension A B C D E F G H I J K (DO-216AA) 1.75 - 2.05 (0.069 - 0.081) 1.80 - 2.20 (0.071 - 0.087) 0.95 - 1.25 (0.037 - 0.049) 0.42 - 0.68 (0.017 - 0.027) 0.70 - 1.00 (0.028 - 0.039) -0.05 - +0.10 (0.002 - 0.004) 0.10 - 0.25 (0.004 - 0.010) 3.65 - 3.95 (0.144 - 0.156) 0.40 - 0.70 (0.016 - 0.028) 1.10 - 1.50 (0.043 - 0.059) 0.20 - 0.80 (0.008 - 0.060) Case..............................................JEDEC DO-216AA Molded plastic Polarity ................................................Cathode designated by TAB 1 Weight ....................................................Approximately 0.016 grams Mounting Position ................................................................One way Typical Part Marking CD216A-B120L ..........................................................................B2L CD216A-B120R ..........................................................................B2E CD216A-B130L ..........................................................................B3L CD216A-B140 ............................................................................B4S How To Order CD 216A - B 1 20 L __ Common Code Chip Diode Package * 216A = DO-216AA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 30 = 30 V 40 = 40 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L) R = Low Leakage Current IR (CD216-B120R) Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb MM DIMENSIONS: (INCHES) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B120L Forward Characteristics 10 Ta = 25 C Pulsewidth: 300 s 10 125 C Reverse Characteristics 100 100 C Forward Current (Amps) Reverse Current (A) 1 1 0.1 25 C 0.01 125 C 0.1 0.0 100 C 0.2 25 C 0.4 Forward Voltage (Volts) 0.6 0.8 0.001 0 5 10 15 20 25 Reverse Voltage (Volts) Derating Curve 1.25 Capacitance Between Terminals 200 180 1.00 Average Forward Current (Amps) 160 140 0.75 Capacitance (pF) 120 100 80 60 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 25 50 75 100 125 150 0 0 10 20 Reverse Voltage (Volts) 30 40 40 20 F = 1 MHz Ta = 25 C 0.50 0.25 Lead Temperature (C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B120R Forward Characteristics 10 Ta = 25 C Pulsewidth: 300 s 100 100 C Reverse Current (A) Reverse Characteristics 1000 125 C Forward Current (Amps) 10 1 1 0.1 25 C 125 C 0.1 0.2 100 C 25 C 0.4 Forward Voltage (Volts) 0.6 0.8 0.01 0 5 10 15 20 25 Reverse Voltage (Volts) Derating Curve 1.25 Capacitance Between Terminals 150 1.00 Average Forward Current (Amps) 125 F = 1 MHz Ta = 25 C 100 0.75 Capacitance (pF) Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 25 50 75 100 125 150 0 Lead Temperature (C) 0 10 20 Reverse Voltage (Volts) 30 40 75 0.50 50 0.25 25 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B130L Forward Characteristics 10 Ta = 25 C Pulsewidth: 300 s 10 125 C Reverse Characteristics 100 100 C Forward Current (Amps) Reverse Current (A) 1 1 0.1 0.01 25 C 100 C 125 C 0.1 0 0.2 0.4 0.6 0.8 1 25 C 0.001 0 5 10 15 20 25 30 35 Reverse Voltage (Volts) Forward Voltage (Volts) Derating Curve 1.25 Capacitance Between Terminals 150 1.00 Average Forward Current (Amps) 125 F = 1 MHz Ta = 25 C 0.75 Capacitance (pF) Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 25 50 75 100 125 150 100 75 0.50 50 0.25 25 Lead Temperature (C) 0 0 10 20 Reverse Voltage (Volts) 30 40 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B140 Forward Characteristics 10 Reverse Characteristics 10 Ta = 25 C Pulsewidth: 300 s 1 125 C 100 C Reverse Current (mA) 0.1 Forward Current (Amps) 1 0.01 0.001 25 C 0.0001 100 C 125 C 0.1 0 0.2 0.4 0.6 0.8 1 25 C 0 5 10 15 20 25 30 35 40 45 Reverse Voltage (Volts) Forward Voltage (Volts) Derating Curve 1.25 Capacitance Between Terminals 150 1.00 Average Forward Current (Amps) 125 F = 1 MHz Ta = 25 C 0.75 Capacitance (pF) Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 25 50 75 100 125 150 100 75 0.50 50 0.25 25 Lead Temperature (C) 0 0 10 20 Reverse Voltage (Volts) 30 40 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 E Index Hole 120 F W B D2 D1 D T d P Trailer A Device C Leader W1 Start DIMENSIONS: MM (INCHES) End ....... ....... ....... ....... ....... ....... ....... ....... 10 pitches (min.) 10 pitches (min.) Direction of Feed Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Item Carrier Width Carrier Length Carrier Depth Sprocket Hole Reel Outside Diameter Reel Inner Diameter Feed Hole Diameter Sprocket Hole Position Punch Hole Position Punch Hole Pitch Sprocket Hole Pitch Embossment Center Overall Tape Thickness Tape Width Reel Width Quantity per Reel Symbol A B C d D D1 D2 E F P P0 P1 T W W1 -- DO-216AA 2.90 0.10 (0.114 - 0.004) 5.30 0.10 (0.209 - 0.004) 1.37 0.10 (0.054 - 0.004) 1.55 0.05 (0.061 - 0.002) 330 / 178.0 (12.992 / 7.007) 75.0 MIN. (2.953) 13.0 0.20 (0.512 - 0.008) 1.75 0.10 (0.069 - 0.004)) 5.50 0.05 (0.217 - 0.002) 4.00 0.10 (0.157 - 0.004) 4.00 0.10 (0.157 - 0.004) 2.00 0.05 (0.079 - 0.002) 0.40 0.10 (0.016 - 0.004) 12.00 0.20 (0.472 - 0.008) 18.4 MAX. (0.724) 3,000 Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 * Fax: +886-2 2562-4116 Europe: Tel: +41-(0)41 768 5555 * Fax: +41-(0)41 768 5510 The Americas: Tel: +1-951 781-5500 * Fax: +1-951 781-5700 www.bourns.com Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. REV. 01/05 |
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